SiC HTCVD simulation modified by sublimation etching

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 107-110

  Kitou, Yasuo ^a   Makino, Emi ^a   Ikeda, Kei ^b   Nagakubo, Masao ^a   Onda, Shoichi ^a  

^a DENSO CORPORATION   (Japan)

^b Queen's Tower B   (Japan)

Author keywords

Bulk growth; Equilibrium vapor pressure; Gas phase reaction; Growth rate; HTCVD; Simulation; Sublimation; Surface reaction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; GROWTH RATE; HIGH TEMPERATURE OPERATIONS; SUBLIMATION; SURFACE REACTIONS;

BULK GROWTH; EQUILIBRIUM VAPOR PRESSURE; GAS PHASE REACTION; HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION (HTCVD);

SILICON CARBIDE;

EID: 37849025497     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.107     Document Type: Conference Paper

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