Tight-binding approach to initial stage of the graphitization process on a vicinal SiC surface

Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

  Inoue, Masato ^a   Kangawa, Yoshihiro ^b   Wakabayashi, Katsunori ^c,d   Kageshima, Hiroyuki ^e   Kakimoto, Koichi ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; FLOW MODES; GRAPHITIZATION PROCESS; INITIAL STAGES; NAVAL RESEARCH LABORATORY; SI ATOMS; STEP-EDGE; SURFACE DECOMPOSITION; TIGHT-BINDING APPROACHES;

ATOMS; DESORPTION; GRAPHENE; GRAPHITE; GRAPHITIZATION; RESEARCH LABORATORIES;

SILICON CARBIDE;

EID: 79953079754     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.038003     Document Type: Article

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