Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O 2 and He/H 2 plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 4, 2012, Pages

  Shoeb, Juline ^a,b   Wang, Ming Mei ^a,c   Kushner, Mark J ^a  

^a Iowa State University   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c GLOBALFOUNDRIES US Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; COMPUTATIONAL INVESTIGATION; FLUOROCARBON PLASMA; FLUOROCARBON POLYMERS; K-VALUE; LOW DIELECTRIC; LOW-K MATERIALS; PLASMA CLEANING; POROUS DIELECTRIC MATERIAL; POROUS LOW-K; POROUS NETWORKS; REACTIVE SPECIES; VACUUM ULTRAVIOLETS; VUV PHOTON;

ATOMS; CLEANING; DIELECTRIC MATERIALS; HYDROGEN; PHOTONS; SILICA;

PLASMAS;

EID: 84863647208     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4718444     Document Type: Article

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