Quantification of processing damage in porous low dielectric constant films

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2287-2291

  Baklanov, Mikhail R ^a   Mogilnikov, Konstantin P ^b   Le, Quoc Toan ^a  

^a IMEC   (Belgium)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Ellipsometric porosimetry; Low k dielectrics; Plasma damage; Porosity

Indexed keywords

ADSORPTION ISOTHERMS; CARBON; CONTACT ANGLE; HYDROPHILICITY; POROSITY;

ELLIPSOMETRIC POROSIMETRY; LOW-K DIELECTRICS; PLASMA DAMAGE;

DIELECTRIC FILMS;

EID: 33751240512     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.019     Document Type: Article

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