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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 5, 2010, Pages 952-960

Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modification

(5) Kuo, Ming Shu a Pal, A R a Oehrlein, G S a Lazzeri, P b Anderle, M b

a University of Maryland (United States)

b ITC IRST (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CARBON FILMS; DAMAGE DETECTION; ION BOMBARDMENT; IONS; MATERIALS; ORGANIC POLYMERS; OXYGEN; PHOTORESISTS; PLASMA APPLICATIONS; PLASMA ETCHING; PLASMAS; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ASHING PROCESS; ASHING RATE; ATOMIC OXYGEN DENSITY; CARBON SPECIES; DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA REACTORS; FIGURE OF MERIT; FLOATING POTENTIALS; IN-SITU; LINE-OF-SIGHT; MECHANISTIC STUDIES; NON-LINE-OF-SIGHT; OPTICAL EMISSIONS; PHOTORESIST ASHING; PLASMA ETCHING PROCESS; POROUS ULK; PROCESS CONDITION; PROCESS INTEGRATION; PROCESS PERFORMANCE; SELF BIAS VOLTAGE; SMALL GAPS; SOURCE GAS; SUBSTRATE BIAS; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; TOF-SIMS ANALYSIS; ULK MATERIALS; ULTRALOW-K;

ELECTRIC DISCHARGES;

EID: 77957743977 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3482343 Document Type: Article

Times cited : (18)

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