First principles analysis of the initial oxidation of Si(001) and Si(111) surfaces terminated with H and CH 3

Journal of Chemical Physics

Volumn 136, Issue 6, 2012, Pages

  Li, Huashan ^a   Lin, Zhibin ^a   Wu, Zhigang ^a   Lusk, Mark T ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; ADSORBED OXYGEN; C-H BOND; COVERAGE-DEPENDENT DISSOCIATION; DISSOCIATIVE ADSORPTION; FIRST-PRINCIPLES; INITIAL OXIDATION; OXYGEN ATOM; SI (1 1 1); SI(0 0 1); SILICON SURFACES; THREE-STEP PROCESS; TRANSITION STATE;

ADSORPTION; DISSOCIATION; ENERGY BARRIERS; HYDROGEN; LIGANDS; OXIDATION; OXYGEN;

SILICON;

EID: 84863125066     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3682782     Document Type: Conference Paper

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