Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 128-132

  Shinohara, Masanori ^a   Katagiri, Teruaki ^a   Iwatsuji, Keitaro ^a   Matsuda, Yoshinobu ^a   Fujiyama, Hiroshi ^a   Kimura, Yasuo ^b   Niwano, Michio ^b  

^a NAGASAKI UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Hydride species; Infrared absorption spectroscopy; Oxygen plasma; Si(100) surface

Indexed keywords

ABSORPTION; HYDROGEN; INFRARED SPECTROSCOPY; INTERFEROMETERS; MOS DEVICES; OXIDATION; PLASMAS; SILICON WAFERS; SURFACE CHEMISTRY;

HYDRIDE SPECIES; INFRARED ABSORPTION SPECTROSCOPY; OXYGEN PLASMA; SI(100) SURFACE;

SILICON;

EID: 13444270619     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.054     Document Type: Conference Paper

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