Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 354-358

  Ikeda, H ^a   Hotta, K ^a   Furuta, S ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; HYDROGENATION; OXIDATION; RELAXATION PROCESSES; SURFACE PHENOMENA; SURFACE STRUCTURE;

SEMICONDUCTING SILICON;

EID: 0030235747     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00170-5     Document Type: Article

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