Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Physical Review Letters

Volumn 80, Issue 2, 1998, Pages 345-348

  Watanabe, Heiji ^a   Kato, Koichi ^a   Uda, Tsuyoshi ^a   Fujita, Ken ^a   Ichikawa, Masakazu ^a   Kawamura, Takaaki ^b   Terakura, Kiyoyuki ^c  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Department of Physics ^*  (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342948476     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.345     Document Type: Article

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