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Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 421-424

Initial stage of oxidation of Si(100) surfaces in dry oxygen

(4) Inanaga, K a Nakahata, T a Furukawa, T a Ono, K a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEATING; MODIFICATION; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); SURFACE PHENOMENA; SURFACE ROUGHNESS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY OXYGEN; HYDROGEN TERMINATED SILICON; STRUCTURAL MODIFICATION; SURFACE MICROROUGHNESS;

OXIDATION;

EID: 0030564301 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00312-1 Document Type: Article

Times cited : (5)

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