Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 19, 2003, Pages

  Yasuda, T ^a,b   Kumagai, N ^a,c   Nishizawa, M ^a,b   Yamasaki, S ^a,b   Oheda, H ^d   Yamabe, K ^d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ANALYTIC METHOD; ARTICLE; CHEMICAL REACTION; CHEMICAL REACTION KINETICS; ENERGY TRANSFER; MOLECULAR DYNAMICS; OSCILLATION; OXIDATION; PRESSURE; REFLECTOMETRY;

EID: 0038503256     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.195338     Document Type: Article

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