Adsorption of triplet O2 on Si(100): The crucial step in the initial oxidation of a silicon surface

Physical Review Letters

Volumn 94, Issue 1, 2005, Pages

  Fan, X L ^a   Zhang, Y F ^a   Lau, W M ^a   Liu, Z F ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

LANDAU-ZENER-STUECKELBERG THEORY; SINGLET POTENTIAL SURFACES (PES); SURFACE OXIDATION; SURFACE SCATTERING;

CHEMISORPTION; COMPUTER SIMULATION; GAS ADSORPTION; KINETIC ENERGY; OXIDATION; PROBABILITY DENSITY FUNCTION; SCATTERING; SILICON; SURFACE REACTIONS;

OXYGEN;

EID: 18144380381     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.016101     Document Type: Article

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