Use of umbrella sampling in the calculation of the potential of the mean force for silicon surface oxidation

Surface Science

Volumn 426, Issue 3, 1999, Pages 290-297

  Teraishi, Kazuo ^a   Endou, Akira ^a   Gunji, Isao ^a   Kubo, Momoji ^a   Miyamoto, Akira ^a   Kitajima, Masahiro ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DESORPTION; GROWTH (MATERIALS); HYDROGEN; MATHEMATICAL MODELS; OXYGEN; REACTION KINETICS; SILICON; SURFACE PHENOMENA; TEMPERATURE;

HYDROGEN TERMINATED SILICON SURFACE; INSULATING SURFACES; UMBRELLA SAMPLING METHOD;

OXIDATION;

EID: 0032676333     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00214-9     Document Type: Article

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