Monolithic 3D-ICs with single grain Si thin film transistors

Solid-State Electronics

Volumn 71, Issue , 2012, Pages 80-87

  Ishihara, R ^a   Derakhshandeh, J ^a   Tajari Mofrad, M R ^a   Chen, T ^a   Golshani, N ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

3D ICs; Crystallization; Excimer laser; Image sensor; Memory; Photo diode; Silicon; SRAM; Thin film transistor

Indexed keywords

3-D INTEGRATION; 3D-ICS; 6T-SRAM; ARTIFICIAL RETINAS; CMOS INVERTERS; CZOCHRALSKI PROCESS; HIGH DEFINITION; HIGH QUALITY; HIGH-DENSITY; IN-PIXEL AMPLIFIERS; LOW TEMPERATURES; LOW-TEMPERATURE PROCESS; SI LAYER; SINGLE GRAINS; SUBMICRON; THIN FILM TRANSISTORS (TFT); TRANSISTOR LEVEL; TWO LAYERS;

CRYSTALLIZATION; DATA STORAGE EQUIPMENT; IMAGE SENSORS; INTEGRATION; PULSED LASERS; SILICON; STATIC RANDOM ACCESS STORAGE; TEMPERATURE; THIN FILM TRANSISTORS;

THREE DIMENSIONAL;

EID: 84862810824     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.025     Document Type: Conference Paper

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