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Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

High quality SiO2 deposited at 80°C by inductively coupled plasma enhanced CVD for flexible display application

(3) Chen, Tao a Ishihara, Ryoichi a Beenakker, Kees a

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; EXCIMER LASER ANNEALING; GATE OXIDE; HIGH QUALITY; INDUCTIVELY-COUPLED; INTERFACE DENSITY; INTERFACE TRAP DENSITY; LOW DEPOSITION TEMPERATURE; THERMAL OXIDES;

ELECTROMAGNETIC INDUCTION; ELECTRON MOBILITY; EXCIMER LASERS; FLEXIBLE DISPLAYS; GAS LASERS; INDUCTIVELY COUPLED PLASMA; PLASMA DEPOSITION; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 77953575562 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3430659 Document Type: Article

Times cited : (10)

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