Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2622-2628

  Rana, Vikas ^a   Ishihara, Ryoichi ^a   Hiroshima, Yasushi ^b   Abe, Daisuke ^b   Inoue, Satoshi ^b   Shimoda, Tatsuya ^b   Metselaar, Wim ^a   Beenakker, Kees ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Technology Platform Research Center   (Japan)

Author keywords

Excimer laser; Location control; Poly Si; Subthreshold slope; Thin film transistor (TFT)

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRON MOBILITY; EXCIMER LASERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICA; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

GRAIN FILTER; LOCATION CONTROL; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 29244431688     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859689     Document Type: Article

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