Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 293-296

  Jagar, Singh ^a   Chan, Mansun ^a   Poon, M C ^a   Wang, Hongmei ^a   Qin, Ming ^a   Ko, Ping K ^a   Wang, Yangyuan ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE OPERATIONS; SILICON ON INSULATOR TECHNOLOGY; SURFACE TOPOGRAPHY;

HIGH TEMPERATURE ANNEALING; METAL INDUCED LATERAL CRYSTALLIZATION; SINGLE GRAIN SILICON;

THIN FILM TRANSISTORS;

EID: 0033342070     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)