An assessment of μ-Czochralski, single-grain silicon thin-film transistor technology for large-area, sensor and 3-D electronic integration

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 7, 2008, Pages 1563-1576

  Saputra, Nitz ^a,b   Danesh, Mina ^a,b   Baiano, Alessandro ^b   Ishihara, Ryoichi ^b   Long, John R ^a,b   Karaki, Nobuo ^a,c   Inoue, Satoshi ^a,c  

^a IEEE

^b Department of Microelectronics   (Netherlands)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

Czochralski fabrication; 3 D integration; Flexible electronic circuits; Large area electronics; Operational amplifier; Pin diodes; RF amplifiers; Single grain thin film transistor (SG TFT); Voltage reference

Indexed keywords

AGRICULTURAL PRODUCTS; AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; BANDPASS AMPLIFIERS; CMOS INTEGRATED CIRCUITS; DENSITY (SPECIFIC GRAVITY); EXCIMER LASERS; GARNETS; GAS LASERS; GEOMETRICAL OPTICS; GRAIN (AGRICULTURAL PRODUCT); OPERATIONAL AMPLIFIERS; OPTICAL DESIGN; POLYSILICON; POWER SUPPLY CIRCUITS; PULSED LASER DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; TECHNOLOGY; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; VOLTAGE MEASUREMENT;

(100) SILICON; (ALGORITHMIC) COMPLEXITY; (OTDR) TECHNOLOGY; CASCODE; CHANNEL POSITION; CMOS VOLTAGE REFERENCE; CZOCHRALSKI (CZ); CZOCHRALSKI (CZ) METHOD; ELECTRONIC INTEGRATION; ELECTRONIC SYSTEMS (ES); EXCIMER; FLEXIBLE PLASTIC SUBSTRATES; HIGHLY INTEGRATED; IN ORDER; LARGE AREAS; LOW MANUFACTURING COST; POWER SUPPLY REJECTION RATIO (PSRR); PROCESSING TEMPERATURES; RF APPLICATIONS; SILICON GRAINS; SILICON THIN FILMS; THIN FILM TRANSISTOR (TFT); TWO STAGES; UNITY GAIN BAND WIDTH; VOLTAGE REFERENCE CIRCUITS;

SILICON;

EID: 46749087862     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.922404     Document Type: Conference Paper

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