Design and fabrication of single grain TFTs and lateral photodiodes for low dose x-ray detection

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 7961, Issue , 2011, Pages

  Arslan, A ^a   Ishihara, R ^a   Derakhshandeh, J ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Czochralski process; image sensor; large area detection; single grain; thin film transistor (TFT); X ray

Indexed keywords

A-SI FILMS; CRYSTALLINE SILICONS; CZOCHRALSKI PROCESS; ELECTRICAL MEASUREMENT; EXCIMER-LASER CRYSTALLIZATION; FIELD-EFFECT MOBILITIES; GATE LENGTH; LARGE AREA DETECTION; LATERAL PIN PHOTODIODES; LOW DOSE; MEASUREMENT RESULTS; SATURATION CURRENT; SILICON GRAINS; SINGLE GRAINS; THIN-FILM-TRANSISTOR (TFT); WHITE LIGHT; X-RAY DETECTIONS; X-RAY IMAGE SENSORS;

DESIGN; FABRICATION; IMAGE SENSORS; MEDICAL IMAGING; PHOTODIODES; SENSORS; THIN FILM DEVICES; X RAYS;

THIN FILM TRANSISTORS;

EID: 79955780182     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.877959     Document Type: Conference Paper

References (4)

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4. Rana, V., Ishihara, R., Hiroshima, Y., Abe, D., Inoue, S., Shimoda, T., Metselaar, W. and Beenakker, K., "Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position inside a Location-Controlled Grain," IEEE Transactions on Electron Devices, 52(12), 2622-2628 (2005) (Pubitemid 41824841)