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Volumn 57, Issue 9, 2010, Pages 2348-2352

Location- and orientation-controlled (100) and (110) single-grain Si TFTs without seed substrate

Author keywords

Laser crystallization; thin film transistors

Indexed keywords

CHANNEL TRANSISTORS; CZOCHRALSKI PROCESS; FIELD-EFFECT MOBILITIES; LASER CRYSTALLIZATION; N-CHANNEL TRANSISTORS; SINGLE-GRAIN THIN-FILM TRANSISTOR;

EID: 77956058713     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2055510     Document Type: Article
Times cited : (3)

References (6)
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    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.12 , pp. 2622-2628
    • Rana, V.1    Ishihara, R.2    Hiroshima, Y.3    Abe, D.4    Inoue, S.5    Shimoda, T.6    Metselaar, W.7    Beenakker, K.8
  • 2
    • 35949038635 scopus 로고
    • Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces
    • Sep.
    • T. Sato, Y. Takeishi, and H. Hara, "Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces," Phys. Rev. B, Condens. Matter, vol.4, no.6, pp. 1950-1960, Sep. 1971.
    • (1971) Phys. Rev. B, Condens. Matter , vol.4 , Issue.6 , pp. 1950-1960
    • Sato, T.1    Takeishi, Y.2    Hara, H.3
  • 4
    • 54249108943 scopus 로고    scopus 로고
    • Location and crystallographic-orientation control of Si grains through combined MILC and μ-Czochralski process
    • Mar.
    • C. Tao, R. Ishihara, W. Metselaar, K. Beenakker, and M. Y. Wu, "Location and crystallographic-orientation control of Si grains through combined MILC and μ-Czochralski process," Jpn. J. Appl. Phys., vol.47, no.3, pp. 1880-1883, Mar. 2008.
    • (2008) Jpn. J. Appl. Phys. , vol.47 , Issue.3 , pp. 1880-1883
    • Tao, C.1    Ishihara, R.2    Metselaar, W.3    Beenakker, K.4    Wu, M.Y.5
  • 5
    • 43349091238 scopus 로고    scopus 로고
    • (110) orientation and location controlled Si grains through combined MILC and μ-Czochralski process
    • Dec.
    • C. Tao, R. Ishihara, W. Metselaar, and K. Beenakker, "(110) orientation and location controlled Si grains through combined MILC and μ-Czochralski process," in Proc. Int. Display Workshop, Dec. 2007, pp. 2011-2012.
    • (2007) Proc. Int. Display Workshop , pp. 2011-2012
    • Tao, C.1    Ishihara, R.2    Metselaar, W.3    Beenakker, K.4
  • 6
    • 77954099007 scopus 로고    scopus 로고
    • Highly uniform singlegrain Si TFTs inside (110) orientated large Si grains
    • Dec.
    • T. Chen, R. Ishihara, A. Baiano, and K. Beenakker, "Highly uniform singlegrain Si TFTs inside (110) orientated large Si grains," in Proc. Int. Display Workshop, Dec. 2008, pp. 1599-1600.
    • (2008) Proc. Int. Display Workshop , pp. 1599-1600
    • Chen, T.1    Ishihara, R.2    Baiano, A.3    Beenakker, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.