Laser-induced Epitaxial Growth (LEG) technology for high density 3-D stacked memory with high productivity

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 80-81

  Son, Yong Hoon ^a   Lee, Jong Wook ^a   Kang, Pilkyu ^a   Kang, Min Gu ^a   Kim, Jin Bum ^a   Lee, Seung Hoon ^a   Kim, Young Pil ^a   Jung, In Soo ^a   Lee, Byeong Chan ^a   Choi, Si Young ^a   Chung, U In ^a   Moon, Joo Tea ^a   Ryu, Byung Il ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CELL GROWTH; CURRENT DENSITY; DATA STORAGE EQUIPMENT; LASERS; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY;

CELL TRANSISTORS; CRYSTAL QUALITIES; ENERGY DENSITIES; HIGH DENSITY SRAM; HIGH PRODUCTIVITY; HIGH QUALITY (HQ); HIGH-DENSITY; KEY FACTORS; LASER-INDUCED; SEED FORMATION; SI LAYER; VLSI TECHNOLOGIES;

EPITAXIAL GROWTH;

EID: 47249153487     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339735     Document Type: Conference Paper

References (2)

1. J. Meindl, IEEE Circuits Device Mag., 19, Nov, 1999.
2. Soon- Moon Jung et al., VLSI Symp. Tech. Dig., 228, 2004.