Strained single-grain silicon n-and p-channel thin-film transistors by excimer laser

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 308-310

  Baiano, Alessandro ^a   Ishihara, Ryoichi ^a   Van Der Cingel, Johan ^a   Beenakker, Kees ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Crystal growth; Excimer laser; Laser annealing; Single grain silicon thin film transistors (SG TFTs); Tensile strain

Indexed keywords

CZOCHRALSKI PROCESS; GRAIN FILTERS; LASER ANNEALING; LASER ENERGY DENSITY; LOW-TEMPERATURE PROCESS; SILICON GRAINS;

CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); EXCIMER LASERS; FILM GROWTH; GAS LASERS; GRAIN BOUNDARIES; GRAIN GROWTH; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

TENSILE STRAIN;

EID: 77950098917     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2040131     Document Type: Article

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