Advanced excimer-laser crystallization techniques of Si thin-film for location control of large grain on glass

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4295, Issue , 2001, Pages 14-23

  Ishihara, R ^a   Van der Wilt, P Ch ^a   Van Dijk, B D ^a   Burtsev, A ^a   Voogt, F C ^a   Bertens, G J ^a   Metselaar, J W ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Crystal Si; Excimer laser; Location control; Poly Si; Thin film transistors

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON MOBILITY; EXCIMER LASERS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; LASER BEAM EFFECTS; LIGHT REFLECTION; THIN FILM TRANSISTORS; THIN FILMS;

OPTICAL REFLECTIVITY;

POLYSILICON;

EID: 0034858992     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.424856     Document Type: Conference Paper

References (28)

1. Polycrystalline semiconductors VI - Bulk materials, thin films, and devices
2. Electron-emissive materials, vacuum microelectronics and flat-panel displays
3. Electron-emissive materials, vacuum microelectronics and flat-panel displays