Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the μ-Czochralski (grain filter) process

Journal of Crystal Growth

Volumn 299, Issue 2, 2007, Pages 316-321

  Ishihara, R ^a   Danciu, D ^a   Tichelaar, F ^a   He, M ^a   Hiroshima, Y ^b   Inoue, S ^b   Shimoda, T ^b   Metselaar, J W ^a,b   Beenakker, C I M ^a,b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

A1. Crystal structure; A2. Czochralski method; A2. Growth from melt; B2. Semiconducting silicon

Indexed keywords

BACKSCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI METHOD; ELECTRON BACKSCATTERING DIFFRACTION (EBSD); GRAIN FILTER; LOCATION CONTROLLED GRAIN; RANDOM GRAIN BOUNDARIES;

SEMICONDUCTING SILICON;

EID: 33846781308     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.010     Document Type: Article

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