Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Matsuki, Nobuyuki ^a   Ishihara, Ryoichi ^a   Baiano, Alessando ^a   Beenakker, Kees ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL GROWTH; ELECTRIC PROPERTIES; EXCIMER LASERS; GARNETS; GAS LASERS; GRAIN BOUNDARIES; LANDFORMS; NONMETALS; OPTICAL DESIGN; SCANNING; SILICON; THIN FILM TRANSISTORS;

CZOCHRALSKI PROCESS; ELECTRICAL ACTIVITIES; ELECTRICAL PROPERTIES; EXCIMER; LATTICE BOUNDARIES; SCANNING CAPACITANCE MICROSCOPY;

CRYSTAL LATTICES;

EID: 49749143798     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968663     Document Type: Article

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