Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Ancona, M G ^a   Binari, S C ^a   Meyer, D J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CONTINUUM MODEL; DEVICE GEOMETRIES; FULL COUPLING; FULLY-COUPLED; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GOVERNING EQUATIONS; INTRINSIC STRESS; INVERSE PIEZOELECTRIC EFFECTS; MATERIAL DISCONTINUITY; MECHANICAL DEGRADATION; PLANE STRAIN CONDITION; THERMAL VARIABLES; THERMOELECTROELASTICITY; TRANSPORT THEORY; TWO-DIMENSIONAL SIMULATIONS;

CONTINUUM MECHANICS; DEGRADATION; GALLIUM NITRIDE; SILICON NITRIDE; STATISTICAL MECHANICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84861718985     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3698492     Document Type: Conference Paper

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