Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

Applied Physics Letters

Volumn 75, Issue 14, 1999, Pages 2070-2072

  Nowak, R ^a   Pessa, M ^b   Suganuma, M ^c   Leszczynski, M ^d   Grzegory, I ^d   Porowski, S ^d   Yoshida, F ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c Aichi Prefectural Government   (Japan)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTALS; ELASTIC MODULI; ELASTOPLASTICITY; FILM PREPARATION; HARDNESS; POISSON RATIO; RESIDUAL STRESSES; STRAIN; STRESS ANALYSIS; THIN FILMS; YIELD STRESS;

EPILAYERS; HERTZIAN EQUATIONS; NANO-INDENTATIONS; STRESS-STRAIN CURVES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032606633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124919     Document Type: Article

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