Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4364-4366

  Lin, Zhaojun ^a   Lu, Wu ^a   Lee, Jaesun ^a   Liu, Dongmin ^a   Flynn, Jeffrey S ^b   Brandes, George R ^b  

^a Ohio State University   (United States)

^b ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; GALLIUM NITRIDE; IRIDIUM; NICKEL; RHENIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

BARRIER HEIGHTS; SCHOTTKY CONTACTS;

HETEROJUNCTIONS;

EID: 0037773319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1584077     Document Type: Article

References (13)

1. A. Ozgur, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoc, Electron. Lett. 31, 389 (1995).
2. M. K. Khan, Q. Chen, M. S. Shur, B. T. Msdermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 17, 84 (1996).
3. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, J. Appl. Phys. 85, 3222 (1999).
4. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, J. Appl. Phys. 87, 334 (2000).
5. L. S. Yu, D. J. Qiao, Q. J. Xing, S. S. Lau, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 73, 238 (1998).
6. J. P. Lbbeston, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
7. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
8. M. S. Shur, Mater. Res. Soc. Symp. Proc. 483, 15 (1998).
9. G. Martin, S. Strite, A. Botchkaev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 65, 610 (1994).
10. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
11. D. Brunner, H. Angerer, E. Bustarret, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997).
12. D. R. Lide, CRC Handbook of Chemistry and Physics (CRC Press, Boca Raton, FL, 1992), p. 12.
13. A. Bykhovski, B. Gelmont, and M. Shur, J. Appl. Phys. 74, 6734 (1993).