Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 96, Issue 23, 2010, Pages

  Makaram, Prashanth ^a,b   Joh, Jungwoo ^b   Del Alamo, Jesús A ^b   Palacios, Tomás ^b   Thompson, Carl V ^a,b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CHEMICAL ETCHING; CRITICAL VOLTAGES; CURRENT COLLAPSE; ELECTRICAL CHARACTERISTIC; ELECTRICAL DEGRADATION; ELECTRON TRAPPING; GAN CAP LAYERS; GATE EDGE; GATE METALLIZATION; GATE-LEAKAGE CURRENT; HIGH-VOLTAGES; MECHANICAL STRESS; SHARP INCREASE; STRESS VOLTAGES; STRUCTURAL DEFECT;

ATOMIC FORCE MICROSCOPY; DEGRADATION; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; LEAKAGE (FLUID); LEAKAGE CURRENTS; MECHANICAL PROPERTIES; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; STRESSES; SURFACE MORPHOLOGY; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953493511     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3446869     Document Type: Article

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