Ohmic contact resistance dependence on temperature for GaN devices

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 816-819

  Pérez Tomás, Amador ^a   Fontsere A ^a   Placidi, Marcel ^a   Baron, N ^c   Chenot, Sebastien ^b   Cordier, Yvon ^b   Moreno, J C ^b   Gammon, Peter M ^d   Jennings, Michael R ^d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CRHEA CNRS   (France)

^c Picogiga International   (France)

^d UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

AlGaN GaN; GaN; HEMT; MOSFET; Ohmic contact; SiC; Temperature

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCE; ELECTRIC CONTACTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; MOSFET DEVICES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TEMPERATURE; TEMPERATURE DISTRIBUTION; TWO DIMENSIONAL ELECTRON GAS;

2-DIMENSIONAL ELECTRON GAS (2DEG); ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; BACK CONTACT; IMPLANTED REGION; MOS-FET; SCHOTTKY DIODES; TEMPERATURE DEPENDENCE;

GALLIUM NITRIDE;

EID: 79955115986     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.816     Document Type: Conference Paper

References (7)

1. G. K. Reeves, H.B. Harrison. IEEE Electron. Device Lett. 5, 111 (1982).
2. + GaN, submitted.
3. A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, A. Constant, P. Godignon, and J. Millán, J. Appl. Phys. 106, art. 074519, (2009).
4. L. Wang, F. M. Mohammed, I. Adesida, J. Appl. Phys. 103, art. 093516, (2008).
5. F. Iucolano, F. Roccaforte, A. Alberti, C. Bongiorno, S. Di Franco, V. Raineri, J. Appl. Phys. 100, 123706 (2006).
6. M. Placidi, A. Pérez-Tomás, A. Constant, G. Rius, N. Mestres, J. Millán, P. Godignon, Appl. Surface Sci., 255, 6057 (2009).
7. M. R. Jennings, A. Pérez-Tomás, M. Davies, D. Walker, L. Zhu, P. Losee, W. Huang, S. Balachandran, O.J. Guy, J.A. Covington, T.P. Chow, P.A. Mawby, Solid-State Electron. 51, 797 (2007).