Deep-submicrometer AlGaN/GaN HEMTs with slant field plates

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 328-330

  Pei, Y ^a   Chen, Z ^a   Brown, D ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Gallium nitride; High electron mobility transistors; Millimeter wave; Power; Slant field plate

Indexed keywords

ALGAN/GAN HEMTS; DRAIN BIAS; MILLIMETER-WAVE; PARASITIC CAPACITANCES; POWER; POWER DENSITIES; POWER-ADDED EFFICIENCIES; PROTOTYPE DEVICES; RF DISPERSIONS; SLANT FIELD PLATE; SUB MICROMETERS;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING GALLIUM; WAVE POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67349180209     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014790     Document Type: Article

References (15)

1. Y. F. Wu, M. Moore, A. Saxler, T. Wisleder, and P. Parikh, "40-W/mm double field-plated GaN HEMTs," in Proc. 64h DRC Tech. Dig., 2006, pp. 151-152.
2. 1-XN heterojunction," Appl. Phys. Lett., vol. 63, no. 9, p. 1214, Aug. 1993.
3. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 81, no. 3, pp. 439-441, Jul. 2002.
4. N. Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. Denbaars, and U. K. Mishra, "High breakdown GaN HEMT with overlapping gate structure," IEEE Electron Device Lett., vol. 21, no. 9, pp. 421-423, Sep. 2000.
5. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET with a field modulating plate," IEEE Electron Device Lett., vol. 24, no. 5, pp. 289-291, May 2003.
6. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
7. T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications," in IEDM Tech. Dig., 2005, p. 32.7.
8. Y. F. Wu, M. Moore, A. Abrahamsen, M. J. Mitos, P. Parish, S. Heikman, and A. Burk, "High voltage millimeter wave GaN HEMTs with 13.7 W/mm power density," in IEDM Tech. Dig., 2007, pp. 405-408.
9. J. S. Moon, D. Wong, M. Hu, P. Hashimoto, M. Antcliffe, C. McGuire, M. Micovic, and P. Willadson, "55% PAE and high power Ka-band GaN HEMTs with linearized transconductance via n+ GaN source contact ledge," IEEE Electron Device Lett., vol. 29, no. 8, pp. 834-837, Aug. 2008.
10. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates," IEEE Electron Device Lett., vol. 27, no. 9, pp. 713-715, Sep. 2006.
11. Y. Pei, R. Chu, L. Shen, N. A. Fichtenbaum, Z. Chen, D. Brown, S. Keller, S. P. Denbaars, and U. K. Mishra, "Recessed slant gate AlGaN/ GaN high electron mobility transistors with 20.9 W/mm at 10 GHz," Jpn. J. Appl. Phys., vol. 46, no. 45, pp. L1 087-L1 089, 2007.
12. R. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J. S. Speck, and U. K. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature," IEEE Electron Device Lett., vol. 27, no. 4, pp. 205-207, Apr. 2006.
13. Y. Pei, F. Recht, N. A. Fichtenbaum, S. Keller, S. P. DenBaars, and U. K. Mishra, "Deep submicron AlGaN/GaN HEMTs with ion implanted source/ drain regions and non-alloyed ohmic contacts," Electron. Lett., vol. 43, no. 25, pp. 1466-1467, Dec. 2007.
14. R. M. Chu, L. K. Shen, N. Fichtenbaum, D. Brown, S. Keller, and U. K. Mishra, "Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts," IEEE Electron Device Lett., vol. 29, no. 4, pp. 297-299, Apr. 2008.
15. M. Y. Kao, C. Lee, R. Hajji, P. Saunier, and H. Q. Tserng, "AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and multi-function MMIC applications," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., 2007, pp. 627-629.