Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 47-53

  Bennett, Brian R ^a   Ancona, Mario G ^a   Boos, J Brad ^a   Canedy, Corwyn B ^a   Khan, Saara A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds; B3. Field effect transistors

Indexed keywords

ALUMINUM ARSENIDE; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRAIN; TERNARY ALLOYS; TERNARY SYSTEMS; TRANSISTORS; WELLS;

A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM WELLS; B2. SEMICONDUCTING GALLIUM COMPOUNDS; B2. SEMICONDUCTING III-V MATERIALS; B2. SEMICONDUCTING TERNARY COMPOUNDS; B3. FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 57649183667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.025     Document Type: Article

References (21)

1. Bennett B.R., Magno R., Boos J.B., Kruppa W., and Ancona M.G. Solid State Electron. 49 (2005) 1875
2. Kruppa W., Boos J.B., Bennett B.R., Papanicolaou N.A., Park D., and Bass R. Electron. Lett. 42 (2006) 688
3. Chau R., Datta S., Doczy M., Doyle B., Jin J., Kavalieros J., Majumdar A., Metz M., and Radosavljevic M. IEEE Trans. Nanotechnol. 4 (2005) 153
4. Ruden P.P., Shur M., Arch D.K., Daniels R.R., Grider D.E., and Nohava T.E. IEEE Trans. Electron Devices 36 (1989) 2371
5. Osbourn G.C. Superlattices Microstruct. 1 (1985) 223
6. Jaffe M., Oh J.E., Pamulapati J., Singh J., and Bhattacharya P. Appl. Phys. Lett. 54 (1989) 2345
7. Drummond T.J., Zipperian T.E., Fritz I.J., Schirber J.E., and Plut T.A. Appl. Phys. Lett. 49 (1986) 461
8. Lee M.L., Fitzgerald E.A., Bulsara M.T., Currie M.T., and Lochtefeld A. J. Appl. Phys. 97 (2005) 011101
9. Myronov M., Sawano K., Shiraki Y., Mouri T., and Itoh K.M. Appl. Phys. Lett. 91 (2007) 082108
10. Bennett B.R., Ancona M.G., Boos J.B., and Shanabrook B.V. Appl. Phys. Lett. 91 (2007) 042104
11. Boos J.B., Bennett B.R., Papanicolaou N.A., Ancona M.G., Champlain J.G., Bass R., and Shanabrook B.V. Electron. Lett. 43 (2007) 834
12. Zhang Y.H. J. Crystal Growth 150 (1995) 838
13. Canedy C.L., Boishin G.I., Bewley W.W., Kim C.S., Vurgaftman I., Kim M., Lindle J.R., Meyer J.R., and Whitman L.J. J. Vac. Sci. Technol. B 22 (2004) 1575
14. Shanabrook B.V., Waterman J.R., Davis J.L., and Wagner R.J. Appl. Phys. Lett. 61 (1992) 2338
15. Passlack M., Droopad R., Rajagopalan K., Abrokwah J., Gregory R., and Nguyen D. IEEE Electron Device Lett. 26 (2005) 713
16. Klem J.F., Lott J.A., Schirber J.E., Kurtz S.R., and Lin S.Y. J. Electron. Mater. 22 (1993) 315
17. Luo L.F., Longenbach K.F., and Wang W.I. IEEE Electron Device Lett. 11 (1990) 567
18. Yoh K., Taniguchi H., Kiyomi K., and Inoue M. Jpn. J. Appl. Phys. 1 30 (1991) 3833
19. Miya S., Muramatsu S., Kuze N., Nagase K., Iwabuchi T., Ichii A., Ozaki M., and Shibasaki I. J. Electron. Mater. 25 (1996) 415
20. Kutt R.N., Scholz R., Ruvimov S.S., Argunova T.S., Budza A.A., Ivanov S.V., Kopyev P.S., Sorokin L.M., and Shcheglov M.P. Fiz Tverd Tela+ 35 (1993) 724
21. Bennett B.R. Appl. Phys. Lett. 73 (1998) 3736