Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Tapajna M ^a   Mishra, U K ^b   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BASE PLATES; ELECTRICAL STRESS; ELECTRONIC TRAPS; GATE EDGE; IMPURITY DIFFUSION; OFF-STATE STRESS; ROOM TEMPERATURE; STRESS CONDITION; SUBSURFACE LAYER; TRAP GENERATION; TRAPPING CHARACTERISTIC; UV LIGHT; VOLTAGE BIAS;

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DIFFUSION IN SOLIDS; DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955156426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460529     Document Type: Article

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