Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 378-383

  Jorel, C ^a   Vallee C ^a   Gourvest, E ^a   Pelissier, B ^a   Kahn, M ^a   Bonvalot, M ^a   Gonon, P ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRODES; GOLD DEPOSITS; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PLATINUM; SEMICONDUCTOR INSULATOR BOUNDARIES; STRUCTURAL METALS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ATOMIC LAYERS; ATTENUATED TOTAL REFLECTANCES; COUNTER ELECTRODES; CRYSTALLINITY; ELECTRICAL CHARACTERISTICS; ELECTRICAL CHARACTERIZATIONS; HFO2 FILMS; JUNCTION INTERFACES; METAL ELECTRODES; METAL INSULATOR METALS; METAL-INSULATOR-METAL STRUCTURES; OXIDE THICKNESS; PHYSICO-CHEMICAL CHARACTERIZATIONS; PLATINUM ELECTRODES; PT ELECTRODES; SPECTROSCOPIC TECHNIQUES; TIN ELECTRODES; VACUUM ULTRA VIOLETS; VOLTAGE LINEARITIES; X-RAY SPECTROSCOPIES;

PLATINUM METALS;

EID: 59949090257     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021036     Document Type: Article

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