Oxygen defect induced photoluminescence of Hf O2 thin films

Applied Physics Letters

Volumn 93, Issue 1, 2008, Pages

  Ni, Jie ^a   Zhou, Qin ^a   Li, Zhengcao ^a   Zhang, Zhengjun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ARGON; CHEMICAL MODIFICATION; HAFNIUM; HAFNIUM COMPOUNDS; INERT GASES; LIGHT EMISSION; LUMINESCENCE; NONMETALS; OXYGEN; PHOTOLUMINESCENCE; THICK FILMS; VACANCIES; VAPOR DEPOSITION; ZINC SULFIDE;

AMERICAN INSTITUTE OF PHYSICS (AIP); E-BEAM DEPOSITION; HF O2 FILMS; OXYGEN DEFECTS; PL PROPERTIES; ROOM TEMPERATURE PHOTOLUMINESCENCE (RT-PL); VISIBLE RANGE;

OXYGEN VACANCIES;

EID: 47249153131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952288     Document Type: Article

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