Impedance study of reproducible switching memory effect

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Volumn , Issue , 2004, Pages 125-128

  Papagianni, C ^a   Nian, Y B ^a   Wang, Y Q ^a   Wu, N J ^a   Ignatiev, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRODES; RANDOM ACCESS STORAGE; SPACE APPLICATIONS; SWITCHING; THIN FILMS;

ELECTRIC PULSE SWITCHING; METALLIC-TIP PROBES; NON-VOLATILE MEMORY (NVM); RESISTANCE RANDOM ASSESS MEMORY (RRAM);

COLOSSAL MAGNETORESISTANCE;

EID: 18844422428     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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