Temperature (5.6-300K) dependence comparison of carrier transport mechanisms in hfO2/SiO2 and siO2 MOS gate stacks

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 48-54

  Southwick, Richard G ^a   Reed, J ^a   Buu, C ^a   Bui, H ^a   Butler, R ^a   Bersuker, G ^b   Knowlton, W B ^a  

^a Boise State University   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; ELECTRIC FIELDS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOW-K DIELECTRIC; TEMPERATURE; THRESHOLD VOLTAGE;

ARRHENIUS BEHAVIORS; CARRIER TRANSPORT MECHANISMS; GATE VOLTAGES; GATE-LEAKAGE CURRENT; HFO 2; SIO 2; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSPORT MECHANISM; VOLTAGE DEPENDENCE;

SILICA;

EID: 64549098609     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796084     Document Type: Conference Paper

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