Dielectric relaxation of atomic-layer-deposited HfO 2 thin films from 1 kHz to 5 GHz

Applied Physics Letters

Volumn 87, Issue 1, 2005, Pages

  Lee, Byungjoo ^a   Moon, Taeho ^a   Kim, Tae Gon ^a   Choi, Duck Kyun ^b   Park, Byungwoo ^a  

^a Seoul National University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CURIE-VON SCHWEIDLER RELAXATION;

DEFECTS; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; INTERFACES (MATERIALS); NATURAL FREQUENCIES; THIN FILMS;

HAFNIUM COMPOUNDS;

EID: 24144436195     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988982     Document Type: Article

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