Graphene electronics for RF applications

IEEE Microwave Magazine

Volumn 13, Issue 4, 2012, Pages 114-125

  Wang, Han ^a   Hsu, Allen L ^a   Palacios, Tomas ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR TRANSPORT; COLUMBIA UNIVERSITY; ELECTROSTATIC CONFINEMENT; FREQUENCY MULTIPLIER; FREQUENCY-DOUBLING; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; HEXAGONAL BORON NITRIDE (H-BN); HIGH CURRENT DENSITIES; MIXED-SIGNAL CIRCUITS; NOISE LEVELS; OPERATING FREQUENCY; RECENT PROGRESS; RF APPLICATIONS; SPECTRAL PURITY; TRANSFER CHARACTERISTICS; UNIVERSITY OF ARIZONA; WIDE BAND-GAP MATERIAL;

CONVERSION EFFICIENCY; HIGH FREQUENCY AMPLIFIERS;

GRAPHENE;

EID: 84861090242     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2012.2189035     Document Type: Article

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