Low-phase-noise graphene FETs in ambipolar RF applications

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 270-272

  Moon, J S ^a   Curtis, D ^a   Zehnder, D ^a   Kim, S ^a   Gaskill, D K ^b   Jernigan, G G ^b   Myers Ward, R L ^b   Eddy Jr , C R ^b   Campbell, P M ^b   Lee, K M ^c   Asbeck, P ^c  

^a Hughes Aircraft Co   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Field effect transistor (FET); frequency multiplier; graphene; mixer; phase noise

Indexed keywords

1/F NOISE; AMBIPOLAR; EPITAXIAL GRAPHENE; FREQUENCY MULTIPLICATION; FREQUENCY MULTIPLIER; GIGAHERTZ RANGE; LOW-PHASE-NOISE; MIXER; NOISE DEGRADATIONS; NONLINEAR CIRCUIT; NONLINEAR PROCESS; PHASE NOISE PERFORMANCE; RF APPLICATIONS; SECOND HARMONIC SIGNALS;

EPITAXIAL GROWTH; FREQUENCY DOUBLERS; GRAPHENE; MESFET DEVICES; MIXERS (MACHINERY); MULTIPLYING CIRCUITS; PHASE NOISE;

FIELD EFFECT TRANSISTORS;

EID: 79951949483     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2100074     Document Type: Article

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