SCOPUS 정보 검색 플랫폼

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 812-814

Channel-length-dependent transport behaviors of graphene field-effect transistors

(4) Han, Shu Jen a Chen, Zhihong b Bol, Ageeth A a Sun, Yanning a

a IBM T J WATSON RESEARCH CENTER (United States)

b PURDUE UNIVERSITY (United States)

Author keywords

Chemical vapor deposition (CVD) graphene; Dirac point; graphene field effect transistor (GFET); short channel effect

Indexed keywords

CHANNEL LENGTH; DIRAC POINT; ELECTRON-HOLE ASYMMETRY; GATE LENGTH SCALING; GATE VOLTAGES; GRAPHENE DEVICES; SHORT-CHANNEL DEVICES; SHORT-CHANNEL EFFECT; TRANSPORT BEHAVIOR;

CHEMICAL VAPOR DEPOSITION; GRAPHENE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957614125 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2011.2131113 Document Type: Article

Times cited : (74)

References (6)

1
- 7444220645
- Electric field in atomically thin carbon films
- DOI 10.1126/science.1102896
- K. C. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
- (2004) Science , vol.306 , Issue.5696 , pp. 666-669
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

2
- 34547314459
- Transport measurements across a tunable potential barrier in graphene
- Jun.
- B. Huard, J. Sulpizio, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon, "Transport measurements across a tunable potential barrier in graphene," Phys. Rev. Lett., vol. 98, no. 23, p. 236 803, Jun. 2007.
- (2007) Phys. Rev. Lett. , vol.98 , Issue.23 , pp. 236803
- Huard, B.¹ Sulpizio, J.² Stander, N.³ Todd, K.⁴ Yang, B.⁵ Goldhaber-Gordon, D.⁶

3
- 34547841212
- A graphene field effect device
- Apr.
- M. C. Lemme, T. Echtermeyer, M. Baus, and H. Kurz, "A graphene field effect device," IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
- (2007) IEEE Electron Device Lett. , vol.28 , Issue.4 , pp. 282-284
- Lemme, M.C.¹ Echtermeyer, T.² Baus, M.³ Kurz, H.⁴

4
- 66749119012
- Large-area synthesis of high-quality and uniform graphene films on copper foils
- Jun.
- X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, "Large-area synthesis of high-quality and uniform graphene films on copper foils," Science, vol. 324, no. 5932, pp. 1312-1314, Jun. 2009.
- (2009) Science , vol.324 , Issue.5932 , pp. 1312-1314
- Li, X.¹ Cai, W.² An, J.³ Kim, S.⁴ Nah, J.⁵ Yang, D.⁶ Piner, R.⁷ Velamakanni, A.⁸ Jung, I.⁹ Tutuc, E.¹⁰ Banerjee, S.K.¹¹ Colombo, L.¹² Ruoff, R.S.¹³

5
- 51749110481
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Sep.
- B. Huard, N. Stander, J. A. Sulpizio, and D. Goldhaber-Gordon, "Evidence of the role of contacts on the observed electron-hole asymmetry in graphene," Phys. Rev. B, Condens. Matter, vol. 78, no. 12, p. 121 402, Sep. 2008.
- (2008) Phys. Rev. B, Condens. Matter , vol.78 , Issue.12 , pp. 121402
- Huard, B.¹ Stander, N.² Sulpizio, J.A.³ Goldhaber-Gordon, D.⁴

6
- 70449365164
- Gate modulation of graphene contacts-On the scaling of graphene FETs
- Z. Chen and J. Appenzeller, "Gate modulation of graphene contacts-On the scaling of graphene FETs," in VLSI Symp. Tech. Dig., 2009, pp. 128-129.
- (2009) VLSI Symp. Tech. Dig. , pp. 128-129
- Chen, Z.¹ Appenzeller, J.²

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