Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering

Nano Letters

Volumn 4, Issue 5, 2004, Pages 947-950

  Lin, Yu Ming ^a   Appenzeller, Joerg ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE;

ARTICLE; CHEMICAL ENGINEERING; DEVICE; ELECTRIC FIELD; ELECTRODE; PARTICLE SIZE; POLARIMETRY; SEMICONDUCTOR; STRUCTURE ANALYSIS; THICKNESS;

EID: 2642569912     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049745j     Document Type: Article

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