Strong suppression of electrical noise in bilayer graphene nanodevices

Nano Letters

Volumn 8, Issue 8, 2008, Pages 2119-2125

  Lin, Yu Ming ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; 2-D SYSTEMS; BI LAYERS; BI-LAYER DEVICES; BULK SEMICONDUCTORS; CARBON ATOMS; CARRIER DENSITIES; ELECTRICAL NOISE; ELECTRICAL PROPERTIES; GRAPHENE; GRAPHENE DEVICES; HONEYCOMB LATTICES; HOOGE'S EMPIRICAL RELATIONS; LOW FREQUENCIES; LOW-NOISE APPLICATIONS; NANO-DEVICES; NATURAL GRAPHITES; NOISE BEHAVIORS; NOISE CHARACTERISTICS; NOISE PARAMETERS; POTENTIAL FLUCTUATIONS; SIGNAL TO NOISE; SINGLE LAYERS; TWO LAYERS; TWO-DIMENSIONAL;

BAND STRUCTURE; CHARGED PARTICLES; ELECTRIC PROPERTIES; GRAPHITE; HONEYCOMB STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 56349096394     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080241l     Document Type: Article

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