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Volumn 50, Issue 7 PART 1, 2011, Pages

Controllability of electrical conductivity by oxygen vacancies and charge carrier trapping at interface between CoO and electrodes

(10) Kishi, Hirofumi a Sarhan, Abdulla Ali Abdulla a Sakaue, Mamoru a Aspera, Susan Meñez a David, Melanie Yadao a Nakanishi, Hiroshi a Kasai, Hideaki a Tamai, Yukio a,b Ohnishi, Shigeo a,b Awaya, Nobuyoshi a,b

a OSAKA UNIVERSITY (Japan)

b SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIER TRAPPING; ELECTRICAL CONDUCTIVITY; ELECTRODE LAYERS; ELECTRODE MATERIAL; FIRST-PRINCIPLES CALCULATION; HIGH VOLTAGE; NON-VOLATILE MEMORIES; PT ELECTRODE; RESISTANCE RANDOM ACCESS MEMORY; SLAB MODEL; SWITCHING MECHANISM; TRANSITION-METAL OXIDES;

CHARGE CARRIERS; COBALT COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRODES; METALLIC COMPOUNDS; OXYGEN; PLATINUM; RANDOM ACCESS STORAGE; TANTALUM; TRANSITION METALS;

OXYGEN VACANCIES;

EID: 79960660656 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.071101 Document Type: Article

Times cited : (12)

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