Resistive switching characteristics of solution-processed transparent TiOx for nonvolatile memory application

Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

  Jung, Seungjae ^a   Kong, Jaemin ^a   Song, Sunghoon ^a   Lee, Kwanghee ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a   Jeon, Sanghun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; COATED GLASS; CONDUCTING FILAMENT; DC VOLTAGE; FABRICATED DEVICE; FAST SWITCHING; INDIUM TIN OXIDE; ISO-PROPOXIDE; MEMORY PERFORMANCE; NON-VOLATILE MEMORY APPLICATION; PULSE WIDTH; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS; SOL-GEL SPIN COATING; SOLUTION-PROCESSED; TIO; VISIBLE RANGE;

AMORPHOUS FILMS; INDIUM COMPOUNDS; ITO GLASS; OXYGEN; RANDOM ACCESS STORAGE; SPIN GLASS; SWITCHING SYSTEMS; TIN; TIN OXIDES; TITANIUM; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

SWITCHING;

EID: 77957704263     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3489370     Document Type: Article

References (33)

1. Y. Yang, A. Purwar, and M. H. White, Solid-State Electron. SSELA5 0038-1101, 43, 2025 (1999). 10.1016/S0038-1101(99)00161-6 (Pubitemid 30529278)
2. M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2005, 459.
3. G. Servalli, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2009, 113.
4. J. Ouyang, C. -W. Chu, C. R. Szmanda, L. Ma, and Y. Yang, Nature Mater. NMAACR 1476-1122, 3, 918 (2004). 10.1038/nmat1269
5. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. APPLAB 0003-6951, 76, 2749 (2000). 10.1063/1.126464
6. International Technology Roadmap for Semiconductors (ITRS) (2008).
7. R. Waser and M. Aono, Nature Mater. NMAACR 1476-1122, 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
8. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. APPLAB 0003-6951, 77, 139 (2000). 10.1063/1.126902
9. D. Seong, M. Jo, D. Lee, and H. Hwang, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 10, H168 (2007). 10.1149/1.2718396 (Pubitemid 46550200)
10. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951, 88, 232112 (2006). 10.1063/1.2211147 (Pubitemid 43877735)
11. D. Seong, J. Park, N. Lee, M. Hasan, S. Jung, H. Choi, J. Lee, M. Jo, W. Lee, S. Park, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2009, 101.
12. W. Chang, Y. Ho, T. Hsu, F. Chen, M. Tsai, and T. Wu, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 12, H135 (2009). 10.1149/1.3074332
13. B. Choi, S. Choi, K. Kim, Y. Shin, C. Hwang, S. Hwang, S. Cho, S. Park, and S. Hong, Appl. Phys. Lett. APPLAB 0003-6951, 89, 012906 (2006). 10.1063/1.2219726 (Pubitemid 44025432)
14. K. Kim, B. Choi, B. Koo, S. Choi, D. Jeong, and C. Hwang, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 9, G343 (2006). 10.1149/1.2353899 (Pubitemid 44652658)
15. J. Yang, M. Pickett, X. Li, D. Ohlberg, D. Stewart, and R. Williams, Nat. Nanotechnol. NNAABX 1748-3387, 3, 429 (2008). 10.1038/nnano.2008.160
16. J. Kim, K. Lee, N. E. Coates, D. Moses, T. Nguyen, M. Dante, and A. J. Heeger, Science SCIEAS 0036-8075, 317, 222 (2007). 10.1126/science.1141711 (Pubitemid 47076192)
17. R. J. Tseng, J. Huang, J. Ouyang, R. B. Kaner, and Y. Yang, Nano Lett. NALEFD 1530-6984, 5, 1077 (2005). 10.1021/nl050587l (Pubitemid 40925420)
18. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, and D. Gundlach, IEEE Electron Device Lett. EDLEDZ 0741-3106, 30, 706 (2009). 10.1109/LED.2009.2021418
19. J. Yun, K. Cho, B. Park, B. Park, and S. Kim, J. Mater. Chem. JMACEP 0959-9428, 19, 2082 (2009). 10.1039/b817062b
20. C. Lee, I. Kim, W. Choi, H. Shin, and J. Cho, Langmuir LANGD5 0743-7463, 25, 4274 (2009). 10.1021/la804267n
21. J. Kim, S. Kim, H. Lee, K. Lee, W. Ma, X. Gong, and A. Heeger, Adv. Mater. ADVMEW 0935-9648, 18, 572 (2006). 10.1002/adma.200501825 (Pubitemid 43385774)
22. S. Cho, K. Lee, and A. J. Heeger, Adv. Mater. ADVMEW 0935-9648, 21, 1941 (2009). 10.1002/adma.200803013
23. G. Li, L. Yang, Y. Jin, and L. Zhang, Thin Solid Films THSFAP 0040-6090, 368, 164 (2000). 10.1016/S0040-6090(00)00725-2
24. N. Serpone, D. Lawless, and R. Khairutdinov, J. Phys. Chem. JPCHAX 0022-3654, 99, 16646 (1995). 10.1021/j100045a026
25. H. Shima, F. Takano, H. Muramatsu, H. Akinaga, Y. Tamai, I. Inque, and H. Takagi, Appl. Phys. Lett. APPLAB 0003-6951, 93, 113504 (2008). 10.1063/1.2982426
26. S. Kim and Y. Choi, Appl. Phys. Lett. APPLAB 0003-6951, 92, 223508 (2008). 10.1063/1.2939555
27. H. B. Lv, M. Yin, X. F. Fu, Y. L. Song, L. Tang, P. Zhou, C. H. Zhao, T. A. Tang, B. A. Chen, and Y. Y. Lin, IEEE Electron Device Lett. EDLEDZ 0741-3106, 29, 309 (2008). 10.1109/LED.2008.917109 (Pubitemid 351486767)
28. C. Chang and S. M. Sze, ULSI Technology, p. 178, McGraw-Hill International, New York (1996).
29. H. Jeong, J. Lee, M. Ryu, and S. Choi, Phys. Status Solidi (RRL) ZZZZZZ 1862-6254, 4, 28 (2010). 10.1002/pssr.200903383
30. C. D. Wagner, A. V. Naumkin, A. Kraut-Vass, J. W. Allison, C. J. Powell, and J. R. Rumble, NIST X-Ray Photoelectron Spectroscopy Database, version 3.5 (web version), National Institute of Standards and Technology, Gaithersburg, MD (2003).
31. D. Kwon, K. Kim, J. Jang, J. Jeon, M. Lee, G. Kim, X. Li, G. Park, B. Lee, S. Han, Nat. Nanotechnol. NNAABX 1748-3387, 5, 148 (2010). 10.1038/nnano.2009.456
32. L. Yu, S. Kim, M. Ryu, S. Choi, and Y. Choi, IEEE Electron Device Lett. EDLEDZ 0741-3106, 29, 331 (2008). 10.1109/LED.2008.918253 (Pubitemid 351486774)
33. H. Jeong, J. Lee, S. Choi, and J. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 95, 162108 (2009). 10.1063/1.3251784