Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 47, Issue 8 PART 1, 2008, Pages 6266-6271

  Fujiwara, Kohei ^a,b   Nemoto, Takumi ^a   Rozenberg, Marcelo J ^a,c   Nakamura, Yoshinobu ^a   Takagi, Hidenori ^a,b,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c UNIVERSITÉ PARIS SUD   (France)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

CuO; Dielectric breakdown; Memory effect; Reduction oxidation; ReRAM; Resistance switching

Indexed keywords

BRIDGES; CHEMICAL OXYGEN DEMAND; COPPER OXIDES; ELECTRIC BREAKDOWN; FORMING; OXIDATION; SWITCHING;

CUO; DIELECTRIC BREAKDOWN; MEMORY EFFECT; RERAM; RESISTANCE SWITCHING;

DATA STORAGE EQUIPMENT;

EID: 55149086159     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6266     Document Type: Article

References (42)

1. S. Q. Liu, N. J. Wu, and A. Ignatiev: Appl. Phys. Lett. 76 (2000) 2749.
2. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer: Appl. Phys. Lett. 77 (2000) 139.
3. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon: TEDM Tech. Dig., 2004, p. 587.
4. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park: Appl. Phys. Lett. 85 (2004) 5655.
5. T. W. Hickmott: J. Appl. Phys. 33 (1962) 2669.
6. J. F. Gibbons and W. E. Beadle: Solid-State Electron. 7 (1964) 785.
7. K. L. Chopra: J. Appl. Phys. 36 (1965) 184.
8. G. Dearnaley, A. M. Stoneham, and D. V. Morgan: Rep. Prog. Phys. 33 (1970) 1129.
9. D. P. Oxley: Electrocomponent Sci. Technol. 3 (1977) 217.
10. H. Pagnia and N. Sotnik: Phys. Status Solidi A 108 (1988) 11.
11. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke: J. Appl. Phys. 98 (2005) 033715.
12. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi: Phys. Rev. B 77 (2008) 035105.
13. H. Shima, F. Takano, H. Akinaga, Y. Tamai, I. H. Inoue, and H. Takagi: Appl. Phys. Lett. 91 (2007) 012901.
14. X. Chen, N. Wu, J. Strozier, and A. Ignatiev: Appl. Phys. Lett. 89 (2006) 063507.
15. Y. B. Nian, J. Strozier, N. Wu, X. Chen, and A. Ignatiev: Phys. Rev. Lett. 98 (2007) 146403.
16. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya: Appl. Phys. Lett. 89 (2006) 223509.
17. M. Quintero, P. Levy, A. G. Leyva, and M. J. Rozenberg: Phys. Rev. Lett. 98 (2007) 116601.
18. G. I. Meijer, U. Staub, M. Janousch, S. L. Johnson, B. Delley, and T. Neisius: Phys. Rev. B 72 (2005) 155102.
19. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson: Adv. Mater. 19 (2007) 2232.
20. A. Sawa, T. Fujii, M, Kawasaki, and Y. Tokura: Appl. Phys. Lett. 85 (2004) 4073.
21. K. Szot, W. Speier, G. Bihlmayer, and R. Waser: Nat. Mater. 5 (2006) 312.
22. S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and A. J. Jacobson; Appl. Phys. Lett. 85 (2004) 317.
23. M. Hamaguchi, K. Aoyama, S. Asanuma, Y. Uesu, and T. Katsufuji: Appl. Phys. Lett. 88 (2006) 142508.
24. A. Odagawa, H. Sato, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi: Phys. Rev. B 70 (2004) 224403.
25. T. Oka and N. Nagaosa: Phys. Rev. Lett. 95 (2005) 266403.
26. M. J. Rozenberg, I. H. Inoue, and M. J. Sanchez: Phys. Rev. Lett. 92 (2004) 178302.
27. M. J. Rozenberg, I. H. Inoue, and M. J. Sanchez: Appl. Phys. Lett. 88 (2006) 033510.
28. S. Seo, M. J. Lee, D. H. Seo, S. K. Choi, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, and B. H. Park: Appl. Phys. Lett. 86 (2005) 093509.
29. D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu: Appl. Phys. Lett. 88 (2006) 202102.
30. K. M. Kim, B. J. Choi, B. W. Koo, S. Choi, D. S. Jeong, and C. S. Hwang: Electrochem. Solid-State Lett. 9 (2006) G343.
31. K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang: Appl. Phys. Lett. 91 (2007) 012907.
32. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka: Appl. Phys. Lett. 89 (2006) 103509.
33. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka: Jpn. J. Appl. Phys. 45 (2006) L991.
34. C. Rossel, G. I. Meijer, D. Brémaud, and D. Widmer: J. Appl. Phys. 90 (2001) 2892.
35. N. Klein: Thin Solid Films 7 (1971) 149.
36. N. Fuschillo, B. Lalevic, and B. Leung: J. Appl. Phys. 46 (1975) 310.
37. J. Goldstein, D. Newbury, D. Joy, C. Lyman, P. Echlin, E. Lifshin, L. Sawyer, and J. Michael: Scanning Electron Microscopy and X-ray Microanalysis (Kluwer, Dordrecht, 2003) 3rd ed.
38. We also observed similar bridge formation in cobalt oxide based devices; it occurs under electric-field stimulation and produces a melted bridge structure.
39. G. K. White and S. B. Woods: Philos. Trans. R. Soc. London, Ser. A 251 (1959) 273.
40. J. P. Moore, D. L. McElroy, and R. S. Graves: Can. J. Phys. 45 (1967) 3849.
41. Since the thickness of the bridge structure cannot be measured directly with our sample configuration, in this estimation we assume that it is 1 μm, which is roughly equal to the width of the bridge observed.
42. T. Schmidt, R. Martel, R. L. Sandstrom, and Ph. Avouris: Appl. Phys. Lett. 73 (1998) 2173.