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Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

Physical model for reset state of Ta2O5/TiO 2-Stacked resistance random access memory

(5) Sakotsubo, Yukihiro a Terai, Masayuki a Kotsuji, Setsu a Sakamoto, Toshitsugu a Hada, Mitsuhiro a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; LOW TEMPERATURES; PHYSICAL MODEL; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE STATE; SINGLE ELECTRON TUNNELING; TIO; TUNNEL BARRIER;

ELECTRON TUNNELING; RANDOM ACCESS STORAGE; TANTALUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77952736690 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DD19 Document Type: Article

Times cited : (24)

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