Improved bipolar resistive switching memory using W/TaOx/W structure

Advanced Materials Research

Volumn 159, Issue , 2011, Pages 333-337

  Prakash, Amit ^a   Maikap, Siddheswar ^a   Lee, H Y ^b   Chen, G ^b   Chen, F ^b   Tsai, Min Jing ^b   Kao, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

High TaOx; Resistive memory; Tungsten (W)

Indexed keywords

CURRENT CONDUCTION MECHANISMS; EDX ANALYSIS; GOOD DATA; HRTEM IMAGES; LOW POWER; MEMORY DEVICE; RESET VOLTAGE; RESISTIVE MEMORY; RESISTIVE SWITCHING MEMORIES;

FLASH MEMORY; TUNGSTEN;

SWITCHING SYSTEMS;

EID: 79953713253     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.159.333     Document Type: Conference Paper

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