SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2750-2755

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

(4) Ozgit, Cagla a Donmez, Inci a Alevli, Mustafa a Biyikli, Necmi a

a BILKENT UNIVERSITY (Turkey)

Author keywords

Aluminum nitride; Atomic layer deposition; Self limiting growth; Thin film; Trimethylaluminum; Wurtzite

Indexed keywords

ALN; ALN FILMS; ALN THIN FILMS; ATOMIC LAYER; BONDING STATE; CHEMICAL COMPOSITIONS; CONSTANT GROWTH RATES; DEPOSITION CYCLES; GLASS SUBSTRATES; GRAZING INCIDENCE X-RAY DIFFRACTION; HEXAGONAL WURTZITE STRUCTURE; HIGH RESOLUTION; HIGHER TEMPERATURES; LOW TEMPERATURE GROWTH; NANOMETER-SIZED CRYSTALLITES; OPTICAL BANDS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE; SI(1 0 0); SUBSTRATE SELECTION; TEMPERATURE RANGE; TRIMETHYLALUMINUM; VARIOUS SUBSTRATES; VISIBLE REGION; WURTZITES;

ALUMINUM; ALUMINUM COATINGS; ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; DEPOSITION RATES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITRIDES; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE REACTIONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

OPTICAL FILMS;

EID: 84856381599 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.11.081 Document Type: Article

Times cited : (89)

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