Fabrication and properties of AlN Film on GaN substrate by using remote plasma atomic layer deposition method

Electronic Materials Letters

Volumn 5, Issue 2, 2009, Pages 83-86

  Ki, Kwang Ho ^a   Kwak, No Won ^a   Lee, Soo Hong ^b  

^a Chongju University   (South Korea)

^b Sejong University   (South Korea)

Author keywords

AlN GaN structure; Aluminum nitride (AlN); Gallium nitride (GaN); GaN MIS; Interface property; MIS

Indexed keywords

ALN FILMS; ALN/GAN STRUCTURE; AS-GROWN; ATOMIC LAYER; CONDUCTION BAND EDGE; GAN MIS; GAN SUBSTRATE; INTERFACE PROPERTY; INTERFACE TRAP DENSITY; MIS; REMOTE PLASMAS; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; TRIMETHYLALUMINUM;

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ELECTRON MOBILITY; GALLIUM NITRIDE; PLASMA DEPOSITION; SUBSTRATES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 77957703423     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2009.06.083     Document Type: Article

References (14)

1. B. Gaffey, L.J. Guido, X.W. Wang, and T.P. Ma, IEEE Trans. on Electron Devices 48, 458 (2001).
2. A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and M. A. Khan, IEEE Electron Devices Lett. 23, 449 (2002).
3. G. Simin, A. Koudymov, H. Fatima, J. Zhang, J. Yang, M. A. Khan, X. Hu, A. Tarakji, R. Gaska, and M. S. Shur, IEEE Electron Devices Lett. 23, 458 (2002).
4. G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, M. A. Khan, M. S. Shur and R. Gaska, IEEE Electron Devices Lett. 22, 53 (2002).
5. X. Hu, A. Koudymov, G. Simon, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur and R. Gaska, Appl. Phys. Lett. 79, 2832 (2000).
6. P. D. Ye, B. Yang, K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang, Appl. Phys. Lett. 86, 063501-1 (2005).
7. T. Hashizume, S. Ootomo, and H. Hasegawa, Appl. Phys. Lett. 83, 2952 (2003).
8. M. O. Aboelfotoh, R. S. Kern, S. Tanaka, and R. F. Davis, Appl. Phys. Lett. 69, 2873 (1996).
9. C. M. Zetterling, M. Östling, K. Wongchotigal, M. G. Spencer, X. Tang, C. I. Harris, N. Nordell, and S. S. Wong, J. Appl. Phys. 82, 2990 (1997).
10. C. H. Lai, A. Chin, B. F. Hung, C. F. Cheng, W. J. Yoo, M. F. Li, C. Zhu, S. P. McAlister and D.-L. Kwong, IEEE Electron Devices Lett. 26, 148 (2005).
11. S. M. Rossnagel, A. Sherman and F. Turner, J. Vac. Sci. Technol. B18, 2016 (2000)
12. S. H. Lee and H. T. Jeon, Electron. Mater. Lett. 3, 17 (2007).
13. C. J. Scozzie, A. J. Lelis, F. B. McLean, R. D. Vispute, S. Choopun, A. Patel, R. P. Sharma and T. Venkatesan, J. Appl. Phys. 86, 4052 (1999).
14. K.-H. Kim, Y.-S. Kim, S.-H. Jeong, S.-W. Jung and S. H. Lee, J. Korean Phys. Soc. 48, 275 (2006).